Datasheet > MM75G3T65B

MM75G3T65B

更新时间： 2024-11-04 17:15:39

品牌	Logo	应用领域
宏微 - MACMIC		双极性晶体管
页数	文件大小	规格书
5页	620K
描述
IGBT分立器件

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MM75G3T65B 数据手册

MM75G3T65B

650V 75A IGBT

June 2022

Version 02

RoHS Compliant

PRODUCT FEATURES

□ 650V IGBT chip in trench FS-technology

□ Low switching losses

□ V_CE(sat)with positive temperature coefficient

□ Fast switching and short tail current

□ Free wheeling diodes with fast and soft reverse recovery

APPLICATIONS

□ High frequency switching application

□ Medical applications

□ Motion/servo control

□ UPS systems

1.Gate

2.Collector

3.Emitter

V_CES

I_C

V_CE(sat)T_J=25°C

1.45V

T_Jmax

Type

Marking

MM75G3T65B

Package

TO-247

MM75G3T65B

650V

75A

175°C

ABSOLUTE MAXIMUM RATINGS(T _C=25°C unless otherwise specified)

Symbol

V_CES

Parameter/Test Conditions

Values

650

±20

±30

115

Unit

T_J=25℃

Collector Emitter Voltage

Gate Emitter Voltage

V_GES

I_C

Transient Gate Emitter Voltage（tp≤10µs,D<0.01）

T_C=25℃

DC Collector Current

T_C=100℃

I_Cpuls

P_tot

Pulsed collector current,tp limited by T_Jmax

Power Dissipation Per IGBT

225

535

650

V_RRM

I_F(AV)

I_Fpuls

T_Jmax

T_Jop

T_stg

T_J=25℃

Repetitive Reverse Voltage

Average Forward Current

Diode pulsed current,tp limited by T_Jmax

Max. Junction Temperature

Operating Temperature

T_C=100℃

225

175

-40~175

-55~150

1.1

℃

Storage Temperature

Torque to heatsink

Weight

Recommended（M3）

MacMic Science & Technology Co., Ltd.

Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China

Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com

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