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MM74HC368 PDF预览

MM74HC368

更新时间: 2024-11-24 23:02:43
品牌 Logo 应用领域
美国国家半导体 - NSC /
页数 文件大小 规格书
9页 185K
描述
Hex TRI-STATE Buffer Inverting Hex TRI-STATE Buffer Hex TRI-STATE Buffer Inverting Hex TRI-STATE Buffer

MM74HC368 数据手册

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January 1988  
MM54HC365/MM74HC365 Hex TRI-STATE Buffer  
É
MM54HC366/MM74HC366 Inverting Hex TRI-STATE Buffer  
MM54HC367/MM74HC367 Hex TRI-STATE Buffer  
MM54HC368/MM74HC368 Inverting Hex TRI-STATE Buffer  
General Description  
These TRI-STATE buffers are general purpose high speed  
inverting and non-inverting buffers that utilize advanced sili-  
con-gate CMOS technology. They have high drive current  
outputs which enable high speed operation even when driv-  
ing large bus capacitances. These circuits possess the low  
power dissipation of CMOS circuitry, yet have speeds com-  
parable to low power Schottky TTL circuits. All 4 circuits are  
capable of driving up to 15 low power Schottky inputs.  
six gates. The MM54/74HC367 and the MM54/74HC368  
also have two output enables, but one enable (G1) controls  
4 gates and the other (G2) controls the remaining 2 gates.  
All inputs are protected from damage due to static dis-  
and ground.  
charge by diodes to V  
CC  
Features  
Y
Typical propagation delay: 15 ns  
The MM54/74HC366 and the MM54/74HC368 are inverting  
buffers, where as the MM54/74HC365 and the MM54/  
74HC367 are non-inverting buffers. The MM54/74HC365  
and the MM54/74HC366 have two TRI-STATE control in-  
puts (G1 and G2) which are NORed together to control all  
Y
Y
Y
Y
Wide operating voltage range: 2V6V  
Low input current: 1 mA maximum  
Low quiescent current: 80 mA maximum (74 Series)  
Output drive capability: 15 LS-TTL loads  
Connection Diagrams  
Dual-In-Line Packages/Top Views  
TL/F/5209–1  
TL/F/5209–2  
Order Number MM54HC365 or MM74HC365  
Order Number MM54HC366 or MM74HC366  
TL/F/5209–3  
TL/F/5209–4  
Order Number MM54HC367 or MM74HC367  
Order Number MM54HC368 or MM74HC368  
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.  
C
1995 National Semiconductor Corporation  
TL/F/5209  
RRD-B30M105/Printed in U. S. A.  

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