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MM54C08J PDF预览

MM54C08J

更新时间: 2024-11-15 12:58:39
品牌 Logo 应用领域
美国国家半导体 - NSC
页数 文件大小 规格书
4页 104K
描述
IC TTL/H/L SERIES, QUAD 2-INPUT AND GATE, CDIP14, CERAMIC, DIP-14, Gate

MM54C08J 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:DIP, DIP14,.3Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.85
系列:TTL/H/LJESD-30 代码:R-CDIP-T14
JESD-609代码:e0长度:19.43 mm
负载电容(CL):50 pF逻辑集成电路类型:AND GATE
最大I(ol):0.00036 A功能数量:4
输入次数:2端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DIP
封装等效代码:DIP14,.3封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:5/15 VProp。Delay @ Nom-Sup:140 ns
传播延迟(tpd):140 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:5.08 mm
子类别:Gates最大供电电压 (Vsup):15 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

MM54C08J 数据手册

 浏览型号MM54C08J的Datasheet PDF文件第2页浏览型号MM54C08J的Datasheet PDF文件第3页浏览型号MM54C08J的Datasheet PDF文件第4页 
February 1988  
MM54C08/MM74C08 Quad 2-Input AND Gate  
General Description  
Features  
Y
Wide supply voltage range  
3.0V to 15V  
1.0V  
Employing complementary MOS (CMOS) transistors to  
achieve wide power supply operating range, low power con-  
sumption and high noise margin, these gates provide basic  
functions used in the implementation of digital integrated  
circuit systems. The N- and P-channel enhancement mode  
transistors provide a symmetrical circuit with output swing  
essentially equal to the supply voltage. No DC power other  
than that caused by leakage current is consumed during  
static condition. All inputs are protected from damage due  
Y
Guaranteed noise margin  
Y
High noise immunity  
0.45 V (typ.)  
CC  
Y
Low power  
TTL compatibility  
Fan out of 2  
driving 74L  
Y
Low power consumption  
10 nW/package (typ.)  
to static discharge by diode clamps to V  
and GND.  
CC  
Connection Diagram and Truth Table  
Dual-In-Line Package  
TL/F/5878–1  
Top View  
Order Number MM54C08 or MM74C08  
Inputs  
Outputs  
Y
A
B
L
L
L
H
L
L
L
H
H
L
H
H
e
e
Low Level  
H
High Level  
L
C
1995 National Semiconductor Corporation  
TL/F/5878  
RRD-B30M105/Printed in U. S. A.  

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