Datasheet > MM4410S

MM4410S

更新时间： 2024-10-31 17:15:39

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MOSFET 分立器件

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MM4410S 数据手册

MM4410

100V N-ch Power MOSFET

RoHS Compliant

November 2015

Version 01

PRODUCT FEATURES

□ Proprietary New Trench Technology

□ R_DS(ON).typ=7.0mΩ@V_GS=10V

□ Low Gate Charge Minimize Switching Loss

□ Fast Recovery body Diode

TO-220-3

APPLICATIONS

□ High efficiency DC/DC Converters

□ Synchronous Rectification

□ UPS inverter

1.GATE

2.DRAIN

3.SOURCE

TO-263

V_DS

I_D

R_DS(ON).max T_J=25℃

9.0mΩ

T_Jmax

175℃

Type

Marking

MM4410K

MM4410S

Package

TO-220

TO-263

MM4410K

MM4410S

100V

9.0mΩ

ABSOLUTE MAXIMUM RATINGS

T _C=25°C unless otherwise specified

Symbol

V_DSS

Parameter/Test Conditions

Values

100

Unit

T_J=25℃

Drain Source Voltage

V_GSS

Gate Source Voltage

±20

①

T_C=25℃(Silicon limited)

T_C=100℃(Silicon limited)

Limited by T_Jmax

I_D

Continuous Drain Current

443

Pulsed Drain Current at V_GS=10V

Maximum Power Dissipation

I_DM

P_D

197

Single Pulse Avalanche Energy (V_DD=50V, L=1mH)

Max. Junction Temperature

E_AS

300

T_Jmax

T_STG

Torque

Weight

175

℃

Storage Temperature Range

-55～175

1.1

Module to Sink (TO-220)

Recommended（M3）

2.5

① Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.

THERMAL CHARACTERISTICS

T _C=25°C unless otherwise specified

Symbol

R_thJC

Parameter/Test Conditions

Thermal resistance,junction to case

Values

0.76

Unit

℃/W

R_thJA

Thermal resistance,junction to ambient

MacMic Science & Technology Co., Ltd.

Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China

Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com

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