Datasheet > MM3Z5528E3

MM3Z5528E3

更新时间： 2024-11-20 04:51:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	61K
描述
Zener Diode, 8.2V V(Z), 20%, 0.2W, Silicon, Unidirectional, SOD-323, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MM3Z5528E3 数据手册

MM3Z5518 thru MM3Z5546

S C O T T S D A L E D I V I S I O N

LOW VOLTAGE AVALANCHE DIODE

PRODUCT PREVIEW

FEATURES

SOD323 PACKAGE

LOW ZENER NOISE SPECIFIED

LOW ZENER IMPEDANCE

LOW LEAKAGE CURRENT

SOD323 PACKAGE

MAXIMUM RATINGS

OPERATING TEMPERATURE: -55°CTO +150°C

STORAGE TEMPERATURE: -55°C TO +150°C

POWER: 200mW

ELECTRICAL CHARACTERISTICS PER LINE @ 25°C

Unless otherwise specified

PACKAGE DIMENSIONS

B C D

SUFFIX

B C D SUFFIX

MAX. NOISE

DENSITY

MAX. REVERSE LEAKAGE

CURRENT

NOMINAL

MAX ZENER

REGULATION

FACTOR

LOW

ZENER

VOLTAGE

TEST

IMPEDANCE

MAXIMUM

DC ZENEER

PART

NUMBER

(NOTE 1)

V_Z

CURRENT

I_ZL

DEVICE

MARKING

CURRENT B-C D SUFFIX

I_ZT

mAdc

AT I =250 µA

V_R

VOLTS

V_Z@ I_Z

Z_ZT@ I_ZT

I_R

µAdc

CURRENT

I_ZM

mAdc

N_D

VOLTS

OHMS

(NOTE 3)

(MICRO-VOLTS

PER SQUARE

ROOT CYCLE)

(NOTE 6)

mAdc

NON & A B C D

SUFFIX SUFFIX

(NOTE 2)

3.3

(NOTE 4)

5.0

(NOTE 5)

0.5

2.0

MM3Z5518

0.9

1.0

57.5

0.90

MM3Z5519

MM3Z5520

3.6

3.9

3.0

1.0

0.9

1.0

52.5

49.0

0.5

0.90

0.85

2.0

MM3Z5521

4.3

3.0

1.0

1.5

43.0

0.5

0.75

2.0

MM3Z5522

MM3Z5523

4.7

5.1

5.0

2.0

1.5

2.0

2.5

40.5

37.5

0.5

0.60

0.65

1.0

0.25

MM3Z5524

MM3Z5525

5.6

6.2

3.0

1.0

2.0

1.0

3.0

4.5

3.5

5.0

34.0

30.5

1.0

0.30

0.20

0.25

0.01

MM3Z5526

6.8

1.0

5.5

6.2

28.0

1.0

0.10

0.01

MM3Z5527

MM3Z5528

7.5

8.2

1.0

0.5

6.0

6.5

6.8

7.5

25.5

23.0

2.0

4.0

0.05

0.01

MM3Z5529

MM3Z5530

9.1

1.0

0.1

7.0

8.0

8.2

9.1

21.0

19.0

4.0

0.05

0.10

0.0 1

0.01

10.0

0.05

MM3Z5531

11.0

1.0

0.05

9.0

9.9

17.5

5.0

0.20

0.01

MM3Z5532

MM3Z5533

12.0

13.0

1.0

0.05

0.01

9.5

10.8

11.7

16.0

14.5

0.20

0.01

10.5

INCHES

DIM MIN MAX

MILLIMETERS

MM3Z5534

MM3Z5535

14.0

15.0

1.0

100

0.01

11.5

12.5

12.6

13.5

12.5

0.20

0.01

MIN

MAX

1.092

.102

.152

.406

.152

.043

.004

.006

MM3Z5536

16.0

1.0

100

0.01

13.0

14.4

12.0

0.20

0.01

MM3Z5537

MM3Z5538

17.0

18.0

1.0

100

0.01

14.0

15.0

15.3

16.2

11.0

10.5

0.20

0.01

.010 .016

.003 .006

.063 .075 1.600 1.905

.045 .057 1.143 1.448

.094 .106 2.388 2.692

.254

MM3Z5539

MM3Z5540

19.0

20.0

1.0

100

0.01

0.0

0.01

16.0

17.0

17.1

18.0

10.0

9.5

0.20

0.01

.076

MM3Z5541

22.0

1.0

100

18.0

19.8

8.5

0.20

0.01

MM3Z5542

MM3Z5543

24.0

25.0

1.0

100

20.0

21.0

21.6

22.4

8.0

7.5

0.30

0.35

0.01

MM3Z5544

MM3Z545

28.0

30.0

1.0

100

0.01

23.0

24.0

25.2

27.0

7.0

6.5

0.40

0.45

0.01

MM3Z5546

33.0

1.0

100

0.01

28.0

29.7

6.0

0.50

0.01

NOTES

TOLERANCE AND VOLTAGE DESIGNATION: The type part numbers shown are +/- 20 % with guaranteed limits for only V_Z, I_Rand

V_F. Units with A suffix are +/- 10% with guaranteed limits for only V_Z, I_Rand V_F. Units with guaranteed limits for all six parameters

are indicated by a B suffix for +/- 5.0% units. C suffix for +/- 2.0% and D suffix for +/- 1.0%.

ZENER (V_Z) VOLTAGE MEASUREMENT: Nominal zener voltage is measured with the device junction in thermal equilibrium with

ambient temperature of 25°C at the specified current of I_ZT

ZENER IMPEDANCE (Z_Z) DERIVATION: The zener impedance is derived from the 60 Hz voltage, which results when an ac current

having an rms value equal to 10% of the dc zener current (I_ZT) is superimposed on I_ZT

REVERSE LEAKAGE CURRENT (I_R):

Reverse leakage current is guaranteed and measured at V_Ras shown on the table.

MAXIMUM REGULATOR CURRENT (I_ZM): The maximum current shown is based on the maximum voltage of a 5.0% type unit;

therefore, it applies only to the B C, or D suffix devices. The actual I_ZMfor any devices may not exceed the value of 200 milliwatts

divided by the actual V_Zof the device.

MAXIMUM REGULATION FACTOR (?V_Z): ?V_Zis the maximum difference between Vz at I_ZTand V_Zat I_ZLmeasured with the device

junction in thermal equilibrium.

MSCXXXX.PDF 02-12-2001 REV A

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

中文翻译

下载PDF

与MM3Z5528E3相关器件

型号	品牌	获取价格	描述	数据表
MM3Z5529	MICROSEMI	获取价格	LOW VOLTAGE AVALANCHE DIODE
MM3Z5529A	MICROSEMI	获取价格	Zener Diode, 9.1V V(Z), 10%, 0.2W, Silicon, Unidirectional, SOD-323, 2 PIN
MM3Z5529AE3	MICROSEMI	获取价格	Zener Diode, 9.1V V(Z), 10%, 0.2W, Silicon, Unidirectional, SOD-323, 2 PIN
MM3Z5529B	MICROSEMI	获取价格	Zener Diode, 9.1V V(Z), 5%, 0.2W, Silicon, Unidirectional, SOD-323, 2 PIN
MM3Z5529BE3	MICROSEMI	获取价格	Zener Diode, 9.1V V(Z), 5%, 0.2W, Silicon, Unidirectional, SOD-323, 2 PIN
MM3Z5529C	MICROSEMI	获取价格	Zener Diode, 9.1V V(Z), 2%, 0.2W, Silicon, Unidirectional, SOD-323, 2 PIN
MM3Z5529CE3	MICROSEMI	获取价格	Zener Diode, 9.1V V(Z), 2%, 0.2W, Silicon, Unidirectional, SOD-323, 2 PIN
MM3Z5529D	MICROSEMI	获取价格	Zener Diode, 9.1V V(Z), 1%, 0.2W, Silicon, Unidirectional, SOD-323, 2 PIN
MM3Z5529DE3	MICROSEMI	获取价格	Zener Diode, 9.1V V(Z), 1%, 0.2W, Silicon, Unidirectional, SOD-323, 2 PIN
MM3Z5529E3	MICROSEMI	获取价格	Zener Diode, 9.1V V(Z), 20%, 0.2W, Silicon, Unidirectional, SOD-323, 2 PIN

与MM3Z5528E3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

MM3Z5528E3

MM3Z5528E3 数据手册

与MM3Z5528E3相关器件

与MM3Z5528E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MM3Z5528E3

MM3Z5528E3 数据手册

与MM3Z5528E3相关器件

与MM3Z5528E3相关文章

您还可以找

您在本页遇到什么问题？