Datasheet > MM1000HF10B1H

MM1000HF10B1H

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
银茂微 - SILVERMICRO		/
页数	文件大小	规格书
6页	473K
描述
MOSFET Half Bridge-100V

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中文翻译

获取价格

数据手册

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MM1000HF10B1H 数据手册

MM1000HF10B1H

Preliminary Data

MOSFET Module

Features：

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free Halogen-Free

Applications：

Hard Switched and High Frequency Circuits

Main And Auxiliary AC Drives of Electric Vehicles

Absolute Maximum Ratings(T_C=25℃unless otherwise specified)

Symbol

V_DSS

Description

Drain-Source Blocking Voltage

Value

100

Units

V_GSS

Gate-Source Voltage

±20

Wire Bond Limited

Silicon Limited

1000

1440

2400

1500

2400

2080

Continuous Drain Current,

I_D

V_GS=10V

Pulse width limited by max.

junction temperature

I_DM

I_S

Pulsed Drain Current

Continuous Source Current(diode)

Pulsed Source Current

Pulse width limited by max.

junction temperature

T_C=25℃

I_SM

P_D

Maximum Power Dissipation

T_Jmax=175℃

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Page 1 Rev. 01

04/26/2017

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中文翻译

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