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MLN2030SS

更新时间： 2024-10-01 22:30:03

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	20K
描述
NPN SILICON RF POWER TRANSISTOR

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MLN2030SS 数据手册

MLN2030SS

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .205 4L STUD

The ASI MLN2030SS is Designed

for

FEATURES:

· Omnigold™ Metalization System

#8-32UNC

MAXIMUM RATINGS

10 A

60 V

I_C

MINIMUM

inches mm

MAXIMUM

inches mm

DIM

V_CB

V_CE

P_DISS

T_J

.976 / 24.800

.028 / 0.700

1.000 / 25.4000

.031 / 0.800

35 V

.138 / 3.500

140 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

20 ^OC/W

.161 / 4.100

.098 / 2.500

.200 / 5.100

.196 / 5.000

.110 / 2.800

.208 / 5.300

.004 / 0.100

.425 / 10.800

.200 / 5.100

.006 / 0.150

.465 / 11.800

2.05 / 5.200

T_STG

q_JC

ORDER CODE: ASI10633

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_E= 10 mA

V_E= 28 V

BV_CER

BV_EBO

I_CES

R_BE= 10 W

4.0

---

h_FE

V_CE= 5.0 V

I_C= 1.0 A

100

C_ob

P_GE

V_CB= 28 V

f = 1.0 MHz

f = 2.0 GHz

5.0

V_CE= 18 V

I_CQ= 220 mA

P_OUT= 1.0 W

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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