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MLN1027SS

更新时间: 2024-09-28 22:30:03
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 21K
描述
NPN SILICON RF POWER TRANSISTOR

MLN1027SS 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84最大集电极电流 (IC):1 A
基于收集器的最大容量:3.5 pF集电极-发射极最大电压:35 V
配置:SINGLE最小直流电流增益 (hFE):10
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):140 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

MLN1027SS 数据手册

  
MLN1027SS  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE .205 4L STUD  
D
The ASI MLN1027SS is Designed  
for  
A
C
FEATURES:  
B
·
G
E
·
F
H
· Omnigold™ Metalization System  
#8-32UNC  
J
MAXIMUM RATINGS  
10 A  
60 V  
IC  
MINIMUM  
inches mm  
MAXIMUM  
inches mm  
DIM  
/
/
.976 / 24.800  
.976 / 24.800  
.028 / 0.700  
1.000 / 25.4000  
1.000 / 25.4000  
.031 / 0.800  
A
B
C
D
E
F
VCB  
VCE  
PDISS  
TJ  
35 V  
.138 / 3.500  
.161 / 4.100  
.098 / 2.500  
.200 / 5.100  
.196 / 5.000  
.110 / 2.800  
.208 / 5.300  
140 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
25 OC/W  
G
.004 / 0.100  
.425 / 10.800  
.200 / 5.100  
.006 / 0.150  
.465 / 11.800  
2.05 / 5.200  
H
I
J
TSTG  
qJC  
ORDER CODE: ASI10621  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 50 mA  
IE = 10 mA  
VCE = 28 V  
VCE = 5.0 V  
35  
V
BVCER  
BVEBO  
ICES  
RBE = 10 W  
60  
V
4.0  
V
5
mA  
---  
hFE  
IC = 1.0 A  
10  
11  
100  
Cob  
PG  
VCB = 28 V  
f = 1.0 MHz  
f = 1.0 GHz  
3.5  
pF  
dB  
VCE = 20 V  
ICQ = 100 mA  
POUT = 0.5 W  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

MLN1027SS 替代型号

型号 品牌 替代类型 描述 数据表
2SC2932 MITSUBISHI

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