MLL14KESD6.0A

更新时间： 2024-11-24 22:29:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		瞬态抑制器二极管电视局域网
页数	文件大小	规格书
4页	410K
描述
SURFACE MOUNT TVS

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中文翻译

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技术参数
数据手册

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MLL14KESD6.0A 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-213AB	包装说明：	O-LELF-R2
针数：	2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.92	Is Samacsys：	N
最小击穿电压：	6.67 V	外壳连接：	ISOLATED
最大钳位电压：	17.6 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-213AB	JESD-30 代码：	O-LELF-R2
JESD-609代码：	e0	最大非重复峰值反向功率耗散：	4000 W
元件数量：	1	端子数量：	2
最高工作温度：	200 °C	最低工作温度：	-65 °C
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	1.25 W
认证状态：	Not Qualified	最大重复峰值反向电压：	6 V
最大反向电流：	600 µA	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WRAP AROUND	端子位置：	END
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

MLL14KESD6.0A 数据手册

MLL14KESD5.0 thru MLL14KESD170A

SURFACE MOUNT TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These surface mount Transient Voltage Suppressor (TVS) devices feature

the ability to clamp dangerous high voltage short-term transients such as

produced by direct or radiated electro-static discharge phenomena before

entering sensitive component regions of a circuit design. They are small

economical TVSs targeted primarily for short term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as seen in Figure 1.

DO-213AB

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 40,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

Absorbs ESD level transients of 14,000 Watts per

MIL-STD-750, Method 1020 (approximately 150 ns

exponential wave, or one microsecond transients

up to 4000 watts. See Figure #1 and #2 for overall

transient Peak Pulse Power.

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5V to 170V

Hermetic DO-213AB package. Also available in

axial-leaded DO-41package (see separate data

sheet for 14KESD5.0 series)

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

•

Minimal capacitance (See Figure #3)

Small surface-mount footprint for high density

mounting

•

Bidirectional features available by adding a “C” or

“CA” suffix to part number

•

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

4000 Watts for One Microsecond Square Wave or

14,000 watts per ESD Wave form of MIL-STD-750,

method 1020.

•

CASE: Hermetically sealed DO-213AB glass MELF

package

TERMINALS: End caps, tin-lead plated solderable

per MIL-STD-750, method 2026

POLARITY: Cathode indicated by band.

MARKING: Cathode band only

TAPE & REEL optional: Standard per EIA-481-B

with 12 mm tape, 1500 per 7 inch reel or 5000 per

13 inch reel (add “TR” suffix to part number)

•

See Surge Rating curve in Figures #1 and 2.

Operating and storage temperature –65^oC to 175^oC

•

Thermal Resistance: 40 ^ºC/W junction to end cap, or

120^ºC/W junction to ambient when mounted on FR4

PC board (1 oz Cu) with recommended footprint (see

last page)

•

Steady-State Power: 1.50 watts at T_EC< 115^oC, or

1.25 watts at T_A= 25^ºC when mounted on FR4 PC

board and recommended footprint as described for

thermal resistance (also see Figure 1)

•

WEIGHT: 0.05 grams

See package dimensions on last page

•

Derate at 22.8 W/^oC above 25^oC for P_PP(1µs) and at

15 mW/^oC above 75^oC for dc power.

Forward Surge Current 500 amps for 1µs at T_L=

25^oC (rise time > 100 ns).

Microsemi

Page 1

10-03-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

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与MLL14KESD6.0A相关器件

型号	品牌	获取价格	描述	数据表
MLL14KESD6.0AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL14KESD6.0AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL14KESD6.0ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL14KESD6.0ATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 6V V(RWM), Unidirectional,
MLL14KESD6.0C	MICROSEMI	获取价格	SURFACE MOUNT TVS
MLL14KESD6.0CA	MICROSEMI	获取价格	SURFACE MOUNT TVS
MLL14KESD6.0CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL14KESD6.0CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL14KESD6.0CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MLL14KESD6.0CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 6V V(RWM), Bidirectional,

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