MITSUBISHI LASER DIODES
ML9xx19 SERIES
Notice: Some parametric limits are subject to change
2.5Gbps InGaAsP DFB LASER DIODE
TYPE
ML925B19F / ML920J19S / ML925J19F
NAME
FEATURES
DESCRIPTION
· l /4 shifted grating structure
ML9XX19 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.
l /4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx19 can
operate in the wide temperature range from 0oC to 70 oC without any
temperature control. They are well suited for light source in long
distance digital transmission application of coarse WDM.
· Wide temperature range operation (0oC to 70oC)
· High side-mode-suppression-ratio (typical 45dB)
· High resonance frequency (typical 11GHz)
APPLICATION
· 2.5Gbps long-haul transmission
· Coarse WDM application
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
Parameter
Output power
Conditions
Ratings
Unit
mW
mA
V
CW
6
IF
Laser forward current
Laser reverse voltage
PD forward current
PD reverse voltage
Operation temperature
Storage temperature
-
-
-
-
-
-
200
VRL
IFD
VRD
Tc
2
2
mA
V
20
0 to +70
-40 to +100
oC
Tstg
oC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25oC)
Parameter Conditions
Limits
Min. Typ. Max.
Symbol
Unit
mA
CW
---
---
---
---
---
12
28
40
70
1.1
18
40
55
80
1.5
---
---
Ith
Threshold current
CW, Tc=70oC
CW, Po=5mW <*1>
CW, Po=5mW, Tc=70oC <*1>
CW, Po=5mW <*1>
CW, Po=5mW <*2>
CW, PL=5mW <*3>
CW, Po=5mW <*1>
Iop
Vop
h
Operation current
Operating voltage
Slope efficiency
mA
V
0.15 0.20
0.13 0.18
mW/mA
lp
Peak wavelength
< *4,*5 >
45
nm
dB
dB
Side mode suppression ratio
Side mode suppression ratio(RF)
CW, Po=5mW, Tc=0 to 70oC <*1>
2.48832Gbps, Ib=Ith, Ipp=40mA
35
---
---
---
---
---
---
---
---
---
SMSR
45
25
30
11
q//
q^
fr
Beam divergence angle (parallel) <*6> CW, Po=5mW
(perpendicular) <*6> CW, Po=5mW
deg.
Resonance frequency
2.48832Gbps, Ib=Ith, Ipp=40mA
GHz
psec
2.48832Gbps, Ib=Ith, Ipp=40mA
20%-80%
tr , tf Rise and Fall time
---
80
120
Im
Id
Monitoring current (PD)
CW, Po=5mW, VRD=1V, RL=10W <*7>
VRD=5V
0.1
---
---
---
---
10
1.5
0.1
20
mA
mA
pF
Dark current (PD)
Capacitance (PD)
Ct
VRD=5V, f=1MHz
<*1> PL=5mW is applied to ML925J19F < *2 > Applied to ML925B19F and ML920J19S
< *3 > Applied to ML925J19F <*6> Beam divergence is not applied to ML925J19F
May. 2003
MITSUBISHI
ELECTRIC