Datasheet > ML7XX32

ML7XX32

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		二极管激光二极管
页数	文件大小	规格书
2页	71K
描述
10Gbps InGaAsP DFB LASER DIODE

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ML7XX32 数据手册

MITSUBISHI LASER DIODES

ML7xx32 SERIES

Notice: Some parametric limits are subject to change

10Gbps InGaAsP DFB LASER DIODE

TYPE

NAME

ML792E32/ML792H32

DESCRIPTION

APPLICATION

10Gbps Ethernet/Short Reach

ML7xx32 series are uncooled DFB (Distributed Feedback) laser

diodes for 10Gbps transmission emitting light beam at 1310nm.

l /4 phase shifted grating structure is employed to obtain excellent

SMSR performance under 10Gbps modulation. Furthermore, ML7xx32

***Specification Note

is able to operate in the wide temperature range from 0 C to 85 C

without temperature control.

Type

Matching Resistance :Rs

ML792E32-01

ML792H32-01

42 ± 1 ohm

FEATURES

l /4 phase shifted grating structure

Wide temperature range operation ( 0 ^oC to 85^oC )

High side-mode-suppression-ratio (typical 45dB)

High resonance frequency (typical 15GHz)

Chip-on-carrier

ABSOLUTE MAXIMUM RATINGS

Parameter

Ratings

Symbol

Conditions

Unit

120

Laser forward current

VRL

^oC

Laser reverse voltage

Operation temperature

0 ~ +85

-40 ~+100

Tstg

Storage temperature

(Tc=25 C)

ELECTRICAL/OPTICAL CHARACTERISTICS

Limits

Parameter

Conditions

Symbol

Ith

Unit

Min.

Typ

Max

CW,Tc=85 C

CW,Po=5mW

Threshold current

Iop

Operation current

CW,Po=5mW,Tc=85 C

Vop

Operating voltage

Slope efficiency

CW,Po=5mW

1.1

1.8

CW,Po=5mW

l p

0.20

1290

0.25

1310

mW/mA

Peak wavelength

CW,Po=5mW,Tc= 0 C ~ +85 C

1330

CW,Po=5mW,Tc= 0 C ~ +85 C

Side mode suppression ratio

SMSR

Beam divergence angle (parallel)

(perpendicular)

CW,Po=5mW

deg.

q ^

Resonance frequency

GHz

psec

10Gbps, Ex=7dB, Vpp=2.0V

4th order Bessel - Thompson Filter

Rise time(20%-80%)

Fall time(20%-80%)

MITSUBISHI

ELECTRIC

Mar. 2003

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