ꢀ CMOS NAND Gate And OR Gate
ꢀ Operating Voltage Range : 2V ~ 5.5V
ꢀ High Speed Operation : tpd = 2.6ns TYP
ꢀ Low Power Consumption : 1µA (max)
ꢀ MSOP-8A Package
■Applications
ꢁ Palmtops
ꢁ Digital Equipment
■Description
■Features
ML74WLAESRG comprises of CMOS NAND gate and OR gate,
manufactured using silicon gate CMOS processes. The small
quiescent current, which is one of the features of the CMOS logic,
gives way to high speed operations which enables LS-TTL.
With wave forming buffers connected internally, stabilized output
can be achieved as the series offers high noise immunity.
As the series is integrated into a mini molded, MSOP-8A package,
high density mounting is possible.
High Speed Operation : tpd = 2.6ns TYP (Vcc=5V)
Operating Voltage Range: 2V ~ 5.5V
Low Power Consumption: 1µA (max)
Small Package
: MSOP-8A
■Pin Configuration
■Function
NAND GATE
INPUT
OUTPUT
A
H
H
L
B
H
L
Y
L
H
H
H
H
L
L
OR GATE
INPUT
A
OUTPUT
B
Y
H
H
L
L
H
H
H
H
L
L
H
L
H=High level
L=Low level
■ Absolute Maximum Ratings
Ta=-40°C~85°C
PARAMETER
SYMBOL
RATINGS
UNITS
Power Supply Voltage
Input voltage
Vcc
VIN
-0.5 ~ +6.0
V
V
-0.5 ~ +6.0
Output Voltage
VOUT
IIK
-0.5 ~ Vcc +0.5
V
Input Diode Current
Output Diode current
Switch Output Current
Vcc, GND Current
20
20
mA
mA
mA
mA
mW
°C
IOK
IOUT
ICC, IGND
Pd
25
50
Power Dissipation (Ta=25°C)
Storage Temperature
300
Tstg
-65 ~ +150
Note: Voltage is all Ground standardized.
Rev. B, Sep 2005