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ML40126N PDF预览

ML40126N

更新时间: 2024-01-04 06:27:09
品牌 Logo 应用领域
三菱 - MITSUBISHI 半导体光电二极管激光二极管
页数 文件大小 规格书
4页 54K
描述
FOR OPTICAL INFORMATION SYSTEMS

ML40126N 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.61Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE WITH BUILT-IN PHOTO DIODE
最大正向电流:0.01 A最大正向电压:2.5 V
安装特点:THROUGH HOLE MOUNT功能数量:1
最高工作温度:60 °C最低工作温度:-40 °C
光电设备类型:LASER DIODE标称输出功率:5 mW
峰值波长:785 nm半导体材料:AlGaAs
形状:ROUND尺寸:1.6 mm
子类别:Laser Diodes表面贴装:NO
最大阈值电流:40 mABase Number Matches:1

ML40126N 数据手册

 浏览型号ML40126N的Datasheet PDF文件第2页浏览型号ML40126N的Datasheet PDF文件第3页浏览型号ML40126N的Datasheet PDF文件第4页 
MITSUBISHI LASER DIODES  
ML4XX26 SERIES  
FOR OPTICAL INFORMATION SYSTEMS  
ML40126N  
ML44126N,ML44126R  
TYPE  
NAME  
FEATURES  
FEATURES  
ML4xx26 series is AlGaAs laser diodes which  
Output 5mW(CW)  
Built-in monitor photodiode  
Low droop  
provide a stable, single transverse mode ocillation  
with emission wavelength of 785nm and standard  
continuous light output of 5mW.  
ML4xx26 are hermetically sealed devices having  
the photodiode for optical output monitoring.  
ML4xx26 is produced by the MOCVD crystal  
growth method which is excellent in mass production  
and characteristics uniformity.  
APPLICATION  
Laser Beam Printing, Digital Copy  
ABSOLUTE MAXIMUM RATINGS (Note 1)  
Symbol  
Parameter  
Conditions  
CW  
Ratings  
Unit  
Po  
Light output power  
8
mW  
VRL  
Reverse voltage (laser diode)  
-
2
V
VRD  
IFD  
Tc  
Reverse voltage (Photodiode)  
Forward current (Photodiode)  
Case temperature  
-
-
-
-
30  
V
mA  
°C  
10  
-40~ +60  
-40~ +100  
Tstg  
Storage temperature  
°C  
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,  
and this does not mean the guarantee of its lifetime.As for the reliability,please refer to the reliability report from Mitsubishi  
Semiconductor Quality Assurance Department.  
ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25°C)  
Symbol  
Ith  
Parameter  
Test conditions  
CW  
MIn  
Typ.  
25  
Max  
40  
Unit  
mA  
Threshold current  
Operation current  
Slope efficiency  
Operating voltage  
Peak wavelength  
-
-
Iop  
CW,Po=5mW  
CW,Po=5mW  
CW,Po=5mW  
CW,Po=5mW  
40  
70  
mA  
η
0.25  
-
0.35  
2
0.45  
2.5  
800  
mW/mA  
V
Vop  
λp  
770  
785  
nm  
Beam divergence angle  
(parallel)  
θ//  
θ
CW,Po=5mW  
CW,Po=5mW  
8
11  
29  
15  
36  
°
°
Beam divergence angle  
(perpendicular)  
22  
Im  
Im(Note2)  
ID  
-
-
-
0.45  
0.90  
-
-
-
Monitoring output current  
(Photodiode)  
CW,Po=5mW, VRD=1V  
mA  
RL=10(Note3)  
Dark current (Photodiode)  
Capacitance (Photodiode)  
Droop  
VRD=10V  
0.5  
µA  
pF  
%
Ct  
VRD=5V, f=1MHz  
CW,Po=3mW  
-
-
7
6
-
-
D
Note 2: Applicable to ML44126R and ML44126N  
Note 3: RL=the load resistance of photodiode  
as of February '00  
MITSUBISHI  
ELECTRIC  
( 1 / 4 )  

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