Datasheet > MKA03P130LK

MKA03P130LK

更新时间： 2024-09-17 14:55:07

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	544K
描述
小信号金氧半電晶體

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中文翻译

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数据手册

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MKA03P130LK 数据手册

MKA03P130LK

P-Channel Enhancement Mode Power MOSFET

Drain

Features

• Typical ESD Protection HBM Class 2

Classification

Voltage Range(V)

< 125

Gate

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

Source

1. Gate 2. Source 3. Drain

SOT-23 Plastic Package

Absolute Maximum Ratings(T_a= 25℃ unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

-V_DS

V_GS

± 20

T_a= 25℃

T_a= 70℃

2.6

2.2

Continuous Drain Current ²⁾

Pulsed Drain Current ¹⁾

Power Dissipation ²⁾

-I_D

-I_DM

P_D

T_a= 25℃

T_a= 70℃

1.4

Operating Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 150

℃

T_stg

Thermal Resistance Ratings

Parameter

Symbol

R_θJA

Max.

Unit

℃/W

Thermal Resistance from Juntion to Ambient

t ≤ 10 s ²⁾

Steady State

125

Steady State

R_θJL

Maximum Junction to Lead

¹⁾Repetitive rating, pulse width limited by junction temperature.

²⁾The value of R_θJAis measured with device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate, in a still air

environment with T^a= 25 °C.The value in any given application depends on the user's specific board design. The current rating is based on the

t ≤ 10 s thermal resistance rating.

1 / 6

Dated: 26/02/2021 Rev: 01

12 3 4 5 6

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