MKA02P041UK-AH
P-Channel Enhancement Mode MOSFET
Features
Drain
• AEC-Q101 Qualified
• Extremely low threshold voltage
• Built-in G-S Protection Diode
• Halogen and Antimony Free(HAF),
RoHS compliant
Gate
1. Gate 2. Source 3. Drain
SOT-23 Plastic Package
• Typical ESD Protection HBM Class 1C
Source
Classification Voltage Range(V)
0A
0B
1A
1B
1C
2
< 125
125 to < 250
250 to < 500
500 to < 1000
1000 to < 2000
2000 to < 4000
4000 to < 8000
≥ 8000
3A
3B
Applications
• Portable appliances
• Battery management
• High speed switch
• Low power DC to DC Converter
Absolute Maximum Ratings(at Ta = 25℃ unless otherwise specified)
Parameter Symbol
Value
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
-VDS
VGS
-ID
20
± 8
V
5
30
A
Peak Drain Current, Pulsed 1)
Power Dissipation 2)
-IDM
PD
A
t ≤ 10 s
1.5
W
℃
Operating Junction and Storage Temperature Range
Tj, Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJA
Max.
Unit
t ≤ 10 s
Steady-State
80
100
Thermal Resistance - Junction to Ambient 2)
℃/W
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
2) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
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Dated: 26/06/2023 Rev:03