5秒后页面跳转
MJK32CTWG PDF预览

MJK32CTWG

更新时间: 2024-11-04 11:12:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 1680K
描述
Power Transistor 100 V, 3 A Dual General Purpose PNP

MJK32CTWG 数据手册

 浏览型号MJK32CTWG的Datasheet PDF文件第2页浏览型号MJK32CTWG的Datasheet PDF文件第3页浏览型号MJK32CTWG的Datasheet PDF文件第4页浏览型号MJK32CTWG的Datasheet PDF文件第5页浏览型号MJK32CTWG的Datasheet PDF文件第6页 
DATA SHEET  
www.onsemi.com  
Power Transistor, PNP, Dual  
General Purpose  
100 V, 3 A  
PNP TRANSISTOR  
100 V, 3 A  
C5  
MJK32C  
These Bipolar Junction Transistors are designed for general purpose  
power and switching applications such as regulators, converters  
and power amplifiers. Housed in advanced LFPAK package  
(5 x 6 mm) with excellent thermal conduction. Automotive  
end applications include air bag deployment, power train control  
units, and instrument clusters.  
B 4  
E 123  
Features  
Complementary NPN: MJK31C  
NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
LFPAK4 5x6  
CASE 760AB  
MARKING DIAGRAM  
XXXXX  
XX  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
Unit  
ALLYW  
CollectorEmitter Voltage  
V
100  
Vdc  
CEO  
EBO  
EmitterBase Voltage  
V
5  
3  
Vdc  
A
1
2
3
4
(Top View)  
Collector Current Continuous  
Collector Current Peak  
I
C
XXXXXX  
A
LL  
Y
= Specific Device Code  
= Assembly Location  
= Wafer Lot  
I
5  
A
CM  
Junction and Storage Temperature Range  
T , T  
65 to +150  
_C  
J
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
= Year  
W
= Work Week  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
Device  
Package  
Shipping  
Characteristics  
Symbol  
Max  
Unit  
Thermal Resistance, JunctiontoCase  
per Device (Note 1)  
R
2.4  
_C/W  
MJK32CTWG  
LFPAK4 5x6 3000 / Tape &  
q
JC  
(PbFree)  
Reel  
Thermal Resistance, JunctiontoAmbient  
per Device (Note 1)  
R
45  
_C/W  
LFPAK4 5x6 3000 / Tape &  
NJVMJK32CTWG  
q
JA  
(PbFree)  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Total Power Dissipation  
P
2.7  
W
D
@ T = 25_C (Note 1)  
A
2
1. Surfacemounted on FR4 board using a 6 cm , 2 oz. Cu collector pad.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
April, 2022 Rev. 0  
MJK32C/D  
 

与MJK32CTWG相关器件

型号 品牌 获取价格 描述 数据表
MJK44H11TWG ONSEMI

获取价格

80 V, 8A, Low VCE(sat) NPN Transistor
MJK45H11TWG ONSEMI

获取价格

80 V, 8A, Low VCE(sat) PNP Transistor
MJL0281A ONSEMI

获取价格

Complementary NPN-PNP Power Bipolar Transistors
MJL0281AG ONSEMI

获取价格

Complementary NPN-PNP Power Bipolar Transistors
MJL0302A ONSEMI

获取价格

Complementary NPN-PNP Power Bipolar Transistors
MJL0302AG ONSEMI

获取价格

Complementary NPN-PNP Power Bipolar Transistors
MJL1302 ONSEMI

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
MJL1302 MOTOROLA

获取价格

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS
MJL1302A MOTOROLA

获取价格

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS
MJL1302A ONSEMI

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS