MJE8503A

更新时间： 2024-11-02 22:33:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
4页	93K
描述
POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS - BVCES 80 WATTS

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中文翻译

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技术参数
数据手册

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MJE8503A 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.82
其他特性：	LEADFORM OPTIONS ARE AVAILABLE	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	5 A	集电极-发射极最大电压：	700 V
配置：	SINGLE	最小直流电流增益 (hFE)：	2.25
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	125 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
功耗环境最大值：	80 W	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	7 MHz	最大关闭时间（toff）：	6000 ns
最大开启时间（吨）：	2200 ns	VCEsat-Max：	3 V
Base Number Matches：	1

MJE8503A 数据手册

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by MJE8503A/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

NPN Bipolar Power Transistor

POWER TRANSISTORS

5.0 AMPERES

The MJE8503A transistor is designed for high voltage, high speed, power switching

in inductive circuits where fall time is critical. They are suited for line operated

switchmode applications such as:

1500 VOLTS — BV

80 WATTS

CES

•

Switching Regulators

Inverters

Solenoid and Relay Drivers

Motor Controls

Deflection Circuits

Featuring

•

1500 Volt Collector-Base Breakdown Capability

Fast Switching:

180 ns Typical Fall Times

450 ns Typical Crossover Times

1.2 µs Typical Storage Times

•

Low Collector-Emitter Leakage Current — 100 µA Max @ 1500 V

CES

CASE 221A–06

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

Symbol

Value

700

Unit

Vdc

Adc

CEO(sus)

Collector-Emitter Voltage

1500

5.0

CES

CBO

EBO

Collector-Base Voltage

Emitter-Base Voltage

Collector Current — Continuous

Collector Current — Peak (1)

5.0

Collector Current — Continuous

Collector Current — Peak

4.0

Adc

Total Power Dissipation @ T = 25°C

0.8

Watts

@ T = 100°C

Derate above 25°C

W/°C

°C

Operating and Storage Temperature Range

T , T

–65 to +125

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.25

275

Unit

°C/W

°C

Thermal Resistance, Junction to Case

θJC

Maximum Lead Temperature for Soldering Purposes

1/8″ from Case for 5 sec.

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.

SWITCHMODE is a trademark of Motorola Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

中文翻译

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与MJE8503A相关器件

型号	品牌	获取价格	描述	数据表
MJE8503AAF	ONSEMI	获取价格	TRANSISTOR 5 A, 700 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE8503AAJ	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503AAK	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503AAN	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503AAS	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503AAU	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABA	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABC	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABD	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE8503ABG	ONSEMI	获取价格	5A, 700V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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