是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | TO-225 | 包装说明: | PLASTIC, CASE 77-09, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.13 | Is Samacsys: | N |
其他特性: | BUILT IN BIAS RESISTOR | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 60 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 750 | JEDEC-95代码: | TO-225 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
湿度敏感等级: | NOT SPECIFIED | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | NPN |
认证状态: | COMMERCIAL | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 1 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE800G | ROCHESTER |
获取价格 |
4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225, LEAD FREE, PLASTIC, CASE 77-09, 3 PIN | |
MJE800G | ONSEMI |
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4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT | |
MJE800LEADFREE | CENTRAL |
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
MJE800STU | ONSEMI |
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4.0 A, 60 V NPN Darlington Bipolar Power Transistor, 1920-TUBE | |
MJE800STU | FAIRCHILD |
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NPN Epitaxial Silicon Darlington Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, | |
MJE800T | ONSEMI |
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DARLINGTON POWER TRANSISTORS COMPLEMENTARY | |
MJE800T | MOSPEC |
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POWER TRANSISTORS(4.0A,60-80V,40W) | |
MJE800T | ISC |
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isc Silicon NPN Darlington Power Transistor | |
MJE800T | MOTOROLA |
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4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT | |
MJE800T | NJSEMI |
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Trans Darlington NPN 60V 4A 3-Pin(3+Tab) TO-220 Box |