Datasheet > MJE800

MJE800

更新时间： 2024-11-28 10:55:43

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	103K
描述
Silicon NPN Power Transistors

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MJE800 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

MJE800/801/802/803

DESCRIPTION

·With TO-126 package

·Complement to type MJE700/701/702/703

·High DC current gain

·DARLINGTON

APPLICATIONS

·Designed for general–purpose amplifier

and low–speed switching applications

PINNING (see Fig.2)

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

ABSOLUTE MAXIMUM RATINGS(T_C=25ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

MJE800/801

MJE802/803

MJE800/801

MJE802/803

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current

Open collector

ꢀ

I_B

Base current

0.1

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

-55~150

ꢀ

T_stg

12 3

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