MJE720PBFREE

更新时间： 2024-11-26 13:11:35

品牌	Logo	应用领域
CENTRAL		晶体晶体管局域网
页数	文件大小	规格书
2页	130K
描述
Power Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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MJE720PBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.7	Is Samacsys：	N
JESD-609代码：	e3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MJE720PBFREE 数据手册

MJE710 MJE711 MJE712 PNP

MJE720 MJE721 MJE722 NPN

Central

Semiconductor Corp.

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MJE710, MJE720

series types are Complementary Silicon Power

Transistors designed for low power amplifier and

medium speed switching aplications.

MARKING: FULL PART NUMBER

TO-126 CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

MJE710

MJE720

MJE711

MJE721

5.0

1.5

0.5

1.25

-65 to +150

100

MJE712

MJE722

SYMBOL

UNITS

°C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Base Current

CBO

CEO

EBO

Power Dissipation

Power Dissipation (T =25°C)

Operating and Storage Junction Temperature

Thermal Resistance

T , T

stg

°C/W

Thermal Resistance

6.25

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

μA

=Rated V

=1/2 Rated V

=5.0V

, V

=1.5V

=1.5V (T =125°C)

100

500

1.0

CEV

CEO

EBO

CEO BE(OFF)

CEO

I =50mA (MJE710, MJE720)

I =50mA (MJE711, MJE721)

I =50mA (MJE712, MJE722)

CEO

I =150mA, I =15mA

0.15

0.4

1.0

1.3

0.95

CE(SAT)

BE(SAT)

BE(ON)

I =500mA, I =50mA

I =1.5A, I =300mA

=1.0V, I =500mA

=1.0V, I =150mA

8.0

=1.0V, I =500mA

=1.0V, I =1.0A

R1 (16-September 2008)

中文翻译

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