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MJE711TIN/LEAD PDF预览

MJE711TIN/LEAD

更新时间: 2024-11-26 12:57:51
品牌 Logo 应用领域
CENTRAL 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
2页 130K
描述
Power Bipolar Transistor,

MJE711TIN/LEAD 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.79Is Samacsys:N
JESD-609代码:e0峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Tin/Lead (Sn/Pb)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MJE711TIN/LEAD 数据手册

 浏览型号MJE711TIN/LEAD的Datasheet PDF文件第2页 
TM  
MJE710 MJE711 MJE712 PNP  
MJE720 MJE721 MJE722 NPN  
Central  
Semiconductor Corp.  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MJE710, MJE720  
series types are Complementary Silicon Power  
Transistors designed for low power amplifier and  
medium speed switching aplications.  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
MJE710  
MJE720  
MJE711  
MJE721  
60  
60  
5.0  
1.5  
0.5  
1.25  
20  
-65 to +150  
100  
MJE712  
MJE722  
A
SYMBOL  
UNITS  
V
V
V
A
A
W
W
°C  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Base Current  
V
V
V
40  
40  
80  
80  
CBO  
CEO  
EBO  
I
C
I
B
Power Dissipation  
P
P
D
D
Power Dissipation (T =25°C)  
C
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
J
stg  
JA  
JC  
Θ
°C/W  
°C/W  
Thermal Resistance  
Θ
6.25  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
μA  
μA  
μA  
mA  
V
V
V
V
V
I
I
I
I
V
V
V
V
=Rated V  
=Rated V  
=1/2 Rated V  
=5.0V  
, V  
, V  
=1.5V  
=1.5V (T =125°C)  
C
100  
500  
500  
1.0  
CEV  
CEV  
CEO  
EBO  
CE  
CE  
CE  
EB  
CEO BE(OFF)  
CEO BE(OFF)  
CEO  
BV  
BV  
BV  
I =50mA (MJE710, MJE720)  
I =50mA (MJE711, MJE721)  
I =50mA (MJE712, MJE722)  
40  
60  
80  
CEO  
CEO  
CEO  
C
C
C
V
V
V
V
V
I =150mA, I =15mA  
0.15  
0.4  
1.0  
1.3  
0.95  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
C
B
B
I =500mA, I =50mA  
I =1.5A, I =300mA  
V
V
V
C
B
B
I =1.5A, I =300mA  
C
V
=1.0V, I =500mA  
CE  
CE  
CE  
CE  
C
h
h
h
V
V
V
=1.0V, I =150mA  
40  
20  
8.0  
C
=1.0V, I =500mA  
FE  
FE  
C
=1.0V, I =1.0A  
C
R1 (16-September 2008)  

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