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MJE711 PDF预览

MJE711

更新时间: 2024-11-02 22:33:07
品牌 Logo 应用领域
CENTRAL 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
1页 80K
描述
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MJE711 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.28最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):8JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP功耗环境最大值:1.25 W
最大功率耗散 (Abs):20 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
VCEsat-Max:1 VBase Number Matches:1

MJE711 数据手册

  
145 Adams Avenue, Hauppauge, NY 11788 USA  
Tel: (631) 435-1110 • Fax: (631) 435-1824  

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