Datasheet > MJE4353

MJE4353

更新时间： 2024-11-02 10:55:47

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	139K
描述
Silicon PNP Power Transistors

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MJE4353 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

MJE4350/4351/4352/4353

DESCRIPTION

·With TO-3PN package

·Respectively complement to type

MJE4340/4341/4342/4343

·DC current gain h_FE=8(Min)@I_C=16A

APPLICATIONS

·For use in high power audio amplifier

and switching regulator circuits

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

ABSOLUTE MAXIMUM RATINGS(T_C=25ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

-100

-120

-140

-160

-100

-120

-140

-160

-7

UNIT

MJE4350

MJE4351

MJE4352

MJE4353

MJE4350

MJE4351

MJE4352

MJE4353

Collector-base

voltage

V_CBO

Open emitter

Collector-emitter

voltage

V_CEO

Open base

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

ꢀ

-16

Collector current-peak

Base current

-20

-5

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

125

150

-65~150

ꢀ

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal resistance junction to case

1.0

ꢀ/W

R_{th j-c}

12 3

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