MJE4352

更新时间： 2024-09-16 10:55:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	43K
描述
Silicon PNP Power Transistors

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中文翻译

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技术参数
数据手册

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MJE4352 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Is Samacsys：	N	Base Number Matches：	1

MJE4352 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

MJE4350/4351/4352/4353

DESCRIPTION

·With TO-3PN package

·Respectively complement to type

MJE4340/4341/4342/4343

·DC current gain h_FE=8(Min)@I_C=16A

APPLICATIONS

·For use in high power audio amplifier and

switching regulator circuits

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

MJE4350

CONDITIONS

VALUE

-100

-120

-140

-160

-100

-120

-140

-160

-7

UNIT

MJE4351

MJE4352

MJE4353

MJE4350

MJE4351

MJE4352

MJE4353

Collector-base

voltage

V_CBO

Open emitter

Collector-emitter

voltage

V_CEO

Open base

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

-16

Collector current-peak

Base current

-20

-5

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

125

℃

150

T_stg

-65~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance junction to case

1.0

℃/W

12 3

中文翻译

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