Datasheet > MJE16002BU

MJE16002BU

更新时间： 2024-09-16 21:02:43

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关晶体管
页数	文件大小	规格书
65页	502K
描述
5A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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MJE16002BU 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	PLASTIC, TO-220AB, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.83
最大集电极电流 (IC)：	5 A	集电极-发射极最大电压：	450 V
配置：	SINGLE	最小直流电流增益 (hFE)：	5
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	TIN LEAD	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MJE16002BU 数据手册

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

These transistors are designed for high–voltage, high–speed switching of inductive

circuits where fall time and RBSOA are critical. They are particularly well–suited for

line–operated switchmode applications.

The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for

applications where drive current is limited.

5.0 AMPERE

NPN SILICON

POWER TRANSISTORS

450 VOLTS

80 WATTS

Typical Applications:

•

Switching Regulators

High Resolution Deflection Circuits

Inverters

Motor Drives

Fast Switching Speeds

50 ns Inductive Fall Time @ 75 C (Typ)

70 ns Crossover Time @ 75 C (Typ)

100 C Performance Specified for:

Reverse–Biased SOA

•

Inductive Switching Times

Saturation Voltages

Leakage Currents

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter–Base Voltage

450

850

6.0

CEO(sus)

CEV

Collector Current — Continuous

— Peak (1)

5.0

Base Current — Continuous

— Peak (1)

4.0

8.0

Adc

Total Power Dissipation @ T = 25 C

0.64

Watts

@ T = 100 C

Derate above T = 25 C

W/ C

Operating and Storage Junction Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.56

275

Unit

C/W

Thermal Resistance, Junction to Case

Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds

θJC

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

3–688

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...65

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与MJE16002BU相关器件

型号	品牌	获取价格	描述	数据表
MJE16002BV	ONSEMI	获取价格	5A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE16002C	MOTOROLA	获取价格	5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16002D1	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16002-DR6259	RENESAS	获取价格	5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16002-DR6260	RENESAS	获取价格	5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16002-DR6269	RENESAS	获取价格	5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16002-DR6274	RENESAS	获取价格	5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16002-DR6280	RENESAS	获取价格	5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE16002L	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE16002N	MOTOROLA	获取价格	5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB

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