Datasheet > MJE16002BD

MJE16002BD

更新时间： 2024-11-07 04:47:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
65页	502K
描述
5A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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MJE16002BD 数据手册

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

These transistors are designed for high–voltage, high–speed switching of inductive

circuits where fall time and RBSOA are critical. They are particularly well–suited for

line–operated switchmode applications.

The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for

applications where drive current is limited.

5.0 AMPERE

NPN SILICON

POWER TRANSISTORS

450 VOLTS

80 WATTS

Typical Applications:

•

Switching Regulators

High Resolution Deflection Circuits

Inverters

Motor Drives

Fast Switching Speeds

50 ns Inductive Fall Time @ 75 C (Typ)

70 ns Crossover Time @ 75 C (Typ)

100 C Performance Specified for:

Reverse–Biased SOA

•

Inductive Switching Times

Saturation Voltages

Leakage Currents

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter–Base Voltage

450

850

6.0

CEO(sus)

CEV

Collector Current — Continuous

— Peak (1)

5.0

Base Current — Continuous

— Peak (1)

4.0

8.0

Adc

Total Power Dissipation @ T = 25 C

0.64

Watts

@ T = 100 C

Derate above T = 25 C

W/ C

Operating and Storage Junction Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.56

275

Unit

C/W

Thermal Resistance, Junction to Case

Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds

θJC

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

3–688

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...65

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