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MJE15031 PDF预览

MJE15031

更新时间: 2024-11-04 10:55:47
品牌 Logo 应用领域
CENTRAL 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
2页 529K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

MJE15031 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.27Is Samacsys:N
最大集电极电流 (IC):8 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP最大功率耗散 (Abs):50 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

MJE15031 数据手册

 浏览型号MJE15031的Datasheet PDF文件第2页 
TM  
MJE15028 MJE15030 NPN  
MJE15029 MJE15031 PNP  
Central  
Semiconductor Corp.  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MJE15028/MJE15029  
Series types are Complementary Silicon Power Transistors  
designed for use in audio amplifier applications.  
MARKING: FULL PART NUMBER  
TO-220 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
MJE15028  
SYMBOL MJE15029  
MJE15030  
MJE15031  
A
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Base Current  
V
V
V
120  
120  
150  
V
CBO  
CEO  
EBO  
150  
V
5.0  
8.0  
16  
V
I
A
C
I
A
CM  
I
2.0  
2.0  
50  
A
B
Power Dissipation  
P
P
W
D
Power Dissipation (T =25°C)  
W
C
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +150  
62.5  
°C  
°C/W  
°C/W  
J
Θ
JA  
JC  
Thermal Resistance  
Θ
2.5  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
10  
UNITS  
μA  
μA  
μA  
V
I
I
I
V
V
V
=Rated V  
=Rated V  
=5.0V  
CBO  
CEO  
EBO  
CB  
CE  
EB  
CBO  
CEO  
100  
10  
BV  
I =10mA (MJE15028, MJE15029)  
120  
150  
CEO  
CEO  
CE(SAT)  
BE(ON)  
FE  
C
BV  
I =10mA (MJE15030, MJE15031)  
V
C
V
V
I =1.0A, I =100mA  
0.5  
1.0  
V
C
B
V
=2.0V, I =1.0A  
V
CE  
CE  
CE  
CE  
CE  
CE  
C
h
h
h
h
V
V
V
V
V
=2.0V, I =100mA  
40  
40  
40  
20  
30  
C
=2.0V, I =2.0A  
FE  
C
=2.0V, I =3.0A  
FE  
C
=2.0V, I =4.0A  
FE  
C
f
=10V, I =500mA, f=10MHz  
MHz  
T
C
R0 (17-February 2009)  

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