Datasheet > MJE1320BC

MJE1320BC

更新时间： 2024-09-25 04:58:19

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关晶体管
页数	文件大小	规格书
63页	434K
描述
2A, 900V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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MJE1320BC 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	PLASTIC, TO-220AB, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.89
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	2 A
集电极-发射极最大电压：	900 V	配置：	SINGLE
最小直流电流增益 (hFE)：	2.5	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	TIN LEAD
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON

MJE1320BC 数据手册

SEMICONDUCTOR TECHNICAL DATA

POWER TRANSISTOR

2 AMPERES

Switchmode Series

900 VOLTS

80 WATTS

This transistor is designed for high–voltage, power switching in inductive circuits

where RBSOA and breakdown voltage are critical. They are particularly suited for

line–operated switchmode applications.

Typical Applications:

•

Fluorescent Lamp Ballasts

Inverters

Solenoid and Relay Drivers

Motor Controls

Deflection Circuits

Features:

•

High V

Low Saturation Voltage

100 C Performance Specified for:

Reverse–Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Capability (1800 Volts)

CEV

CASE 221A–06

TO–220AB

Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter Base Voltage

900

1800

CEO(sus)

CEV

Collector Current — Continuous

Peak(1)

Base Current — Continuous

Peak(1)

1.5

2.5

Adc

Total Power Dissipation @ T = 25 C

0.64

Watts

@ T = 100 C

W/ C

Derate above 25 C

Operating and Storage Junction Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.56

275

Unit

C/W

Thermal Resistance, Junction to Case

θJC

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

3–620

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...63

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与MJE1320BC相关器件

型号	品牌	获取价格	描述	数据表
MJE1320BD	ONSEMI	获取价格	2A, 900V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE1320BG	ONSEMI	获取价格	2A, 900V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE1320BV	ONSEMI	获取价格	2A, 900V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE1320C	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 900V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE1320D1	MOTOROLA	获取价格	2 A, 900 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE1320DW	ONSEMI	获取价格	TRANSISTOR 2 A, 900 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE1320T	MOTOROLA	获取价格	暂无描述
MJE1320U	MOTOROLA	获取价格	2A, 900V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE1320U2	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 900V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE1320W	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 900V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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