5秒后页面跳转
| 生命周期： | Active | 包装说明： | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code： | unknown | 风险等级： | 5.75 |
| 最大集电极电流 (IC)： | 5 A | 集电极-发射极最大电压： | 400 V |
| JESD-30 代码： | R-PSFM-T3 | 端子数量： | 3 |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | FLANGE MOUNT | 极性/信道类型： | NPN |
| 端子形式： | THROUGH-HOLE | 端子位置： | SINGLE |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| MJE13070-6203 | RENESAS |
获取价格 |
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
|
| MJE13070-6255 | RENESAS |
获取价格 |
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
|
| MJE13070-6258 | RENESAS |
获取价格 |
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
|
| MJE13070-6261 | RENESAS |
获取价格 |
5A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB |
|
| MJE13070-6263 | RENESAS |
获取价格 |
5A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB |
|
| MJE13070-6264 | RENESAS |
获取价格 |
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
|
| MJE13070-DR6259 | RENESAS |
获取价格 |
5A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB |
|
| MJE13070-DR6260 | RENESAS |
获取价格 |
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
|
| MJE13070-DR6274 | RENESAS |
获取价格 |
5A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB |
|
| MJE13070-DR6280 | RENESAS |
获取价格 |
5A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB |
|
SK海力士量产12层HBM3E，容量高达36GB
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
贸泽上架Tallysman TW5386智能GNSS天线
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
技术参数
数据手册
如果您发现信息不准确，
