Datasheet > MJE13010A

MJE13010A

更新时间： 2024-09-24 10:55:47

品牌	Logo	应用领域
TGS		晶体晶体管
页数	文件大小	规格书
1页	149K
描述
Silicon NPN Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MJE13010A 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

MJE13010A

Silicon NPN Power Transistor

DESCRIPTION

Silicon NPN, high power transistors in a plastic envelope, primarily

for use in high-speed power switching circuits.

Absolute Maximum Ratings

Parameter

( Ta = 25 C)

Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

700

V_CEO

V_EBO

I_C

400

13.0

6.0

110

150

Base Current

I_B

Total Dissipation at

P_tot

T_j

^oC

Max. Operating Junction Temperature

Storage Temperature

TO-3PN

T_stg

-55~150 ^oC

Electrical Characteristics ( Ta = 25 ^OC)

Parameter

Symbol

Test Conditions

Min.

—

Typ.

Max. Unit

Collector Cut-off Current

1.0

I_CBO

V_CE=700V, I_E=0

V_EB=9V, I_C=0

I_C=10mA, I_B=0

—

I_EBO

Emitter Cut-off Current

1.0

—

V_CEO

h_FE(1)

h_FE(2)

Collector-Emitter Sustaining Voltage

400

—

V_CE=5V, I_C=5.0A

V_CE=5V, I_C=8.0A

—

DC Current Gain

I_C=12A,I_B=3.0A

I_C=8.0A,I_B=1.6A

3.0

1.5

—

Collector-Emitter Saturation Voltage

V_CE(sat)

V_BE(sat)

f_T

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

I_C=8.0A,I_B=1.6A

1.6

—

V_CE=10V, I_C=0.5A,f=1MHz

MHz

Output Capacitance

Turn Off Time

V_CB=10V,I_E=0,f=0.1MHz

180

C_ob

t_S

—

I =-I =1.6A,T =25 s

1.7

4.0

中文翻译

下载PDF

与MJE13010A相关器件

型号	品牌	获取价格	描述	数据表
MJE13011	UTC	获取价格	HIGH VOLTAGE HIGH SPEED SWITCHING
MJE13011_15	UTC	获取价格	HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR
MJE13011L-T3P-T	UTC	获取价格	HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR
MJE13011L-TF3-T	UTC	获取价格	HIGH VOLTAGE HIGH SPEED SWITCHING
MJE13011-T3P-T	UTC	获取价格	HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR
MJE13011-TF3-T	UTC	获取价格	HIGH VOLTAGE HIGH SPEED SWITCHING
MJE13070	ISC	获取价格	isc Silicon NPN Power Transistors
MJE13070	MOSPEC	获取价格	POWER TRANSISTORS(5A,400-450V,80W)
MJE13070	NJSEMI	获取价格	BJT
MJE13070-6203	RENESAS	获取价格	Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast