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MJE13009 PDF预览

MJE13009

更新时间: 2024-11-13 14:54:35
品牌 Logo 应用领域
NJSEMI /
页数 文件大小 规格书
2页 88K
描述
Trans GP BJT NPN 400V 12A 3-Pin(3+Tab) TO-220

MJE13009 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.73
Is Samacsys:N最大集电极电流 (IC):12 A
集电极-发射极最大电压:400 V配置:SINGLE
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

MJE13009 数据手册

 浏览型号MJE13009的Datasheet PDF文件第2页 

与MJE13009相关器件

型号 品牌 获取价格 描述 数据表
MJE13009_06 ONSEMI

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12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
MJE13009_12 UTC

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SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
MJE13009_15 UTC

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SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
MJE1300916 MOTOROLA

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Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
MJE1300916A MOTOROLA

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Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
MJE13009A MOTOROLA

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12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13009A NJSEMI

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Trans GP BJT NPN 400V 12A 3-Pin(3+Tab) TO-220
MJE13009AF MOTOROLA

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Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
MJE13009AJ MOTOROLA

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12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13009C MOTOROLA

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