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MJE13007FTU PDF预览

MJE13007FTU

更新时间： 2024-09-23 13:11:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关高压
页数 文件大小 规格书
5页 51K
描述
Transistor,

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MJE13007FTU 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：compliant风险等级：5.92
最大集电极电流 (IC)：8 A配置：Single
最小直流电流增益 (hFE)：5JESD-609代码：e0
最高工作温度：150 °C极性/信道类型：NPN
最大功率耗散 (Abs)：40 W子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
标称过渡频率 (fT)：4 MHzBase Number Matches：1

MJE13007FTU 数据手册

 浏览型号MJE13007FTU的Datasheet PDF文件第2页浏览型号MJE13007FTU的Datasheet PDF文件第3页浏览型号MJE13007FTU的Datasheet PDF文件第4页浏览型号MJE13007FTU的Datasheet PDF文件第5页 
MJE13006/13007  
High Voltage Switch Mode Application  
•
•
High Speed Switching  
Suitable for Switching Regulator and Motor Control  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
: MJE13006  
: MJE13007  
600  
700  
V
V
CBO  
: MJE13006  
: MJE13007  
300  
400  
V
V
CEO  
Emitter- Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
9
V
A
EBO  
I
8
C
I
I
16  
A
CP  
B
4
80  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector- Emitter Breakdown Voltage  
: MJE13006  
CEO  
I
= 10mA, I = 0  
300  
400  
V
V
C
B
: MJE13007  
I
Emitter Cut-off Current  
*DC Current Gain  
V
= 9V, I = 0  
1
mA  
EBO  
EB  
C
h
V
V
= 5V, I = 2A  
8
5
60  
30  
FE  
CE  
CE  
C
= 5V, I = 5A  
C
V
V
(sat)  
*Collector-Emitter Saturation Voltage  
*Base-Emitter Saturation Voltage  
I
I
I
= 2A, I = 0.4A  
1
2
3
V
V
V
CE  
BE  
C
C
C
B
= 5A, I = 1A  
B
= 8A, I = 2A  
B
(sat)  
I
I
= 2A, I = 0.4A  
1.2  
1.6  
V
V
C
C
B
= 5A, I = 1A  
B
C
Output Capacitance  
Current Gain Bandwidth Product  
Turn ON Time  
V
V
V
= 10V, f = 0.1MHz  
110  
pF  
MHz  
µs  
ob  
CB  
CE  
CC  
f
t
t
t
= 10V, I = 0.5A  
4
T
C
= 125V, I = 5A  
1.6  
3
ON  
STG  
F
C
I
= -I = 1A  
Storage Time  
B1  
B2  
µs  
R = 50Ω  
L
Fall Time  
0.7  
µs  
* Pulse test: PW≤300µs, Duty cycle≤2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  
12345

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