5秒后页面跳转
MJE13007F PDF预览

MJE13007F

更新时间: 2024-09-23 10:55:47
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 678K
描述
NPN Power Transistor 8.0 A 400 Volts

MJE13007F 数据手册

 浏览型号MJE13007F的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MJE13007F  
Micro Commercial Components  
Features  
Power dissipation: 2W(Ta=25)  
NPN  
Collector current: 8A  
Operating and storage junction temperature range  
TJ, Tstg: -55+150℃  
Power Transistor  
8.0 A 400 Volts  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
O
Maximum Ratings @ 25 C Unless Otherwise Noted  
Symbol  
Rating  
Collector-Emitter Breakdown  
Voltage (IC=10mA, IE=0)  
Collector-Base Breakdown  
Voltage  
(IC=1mA, IB=0)  
Emitter-Base Breakdown Voltage  
(IE=1mA, IC=0)  
Collector Cutoff Current  
(VCB=700V,IE=0)  
Emitter Cutoff Current  
(VBE=9.0V,IC=0)  
Type  
---  
Min  
400  
Max  
---  
Unit  
V
ITO-220AB  
VCEO  
VCBO  
---  
---  
700  
---  
V
A
M
N
VEBO  
ICBO  
IEBO  
hFE  
9.0  
---  
---  
1
V
C
mA  
µA  
K
100  
D
E
DC Current Gain  
---  
---  
8.0  
5.0  
40  
30  
---  
---  
( IC=2.0A,VCE=5.0V)  
( IC=5.0A,VCE=5.0V)  
Collector-Emitter Saturation  
Voltage  
1
2
3
VCE(SAT)  
---  
---  
1.0  
V
F
( IC=2.0A, IB=0.4A)  
Base-Emitter Saturation Voltage  
(IC=2.0A, IB=0.4A)  
Current Gain-Bandwidth Product  
( IC=500mA, VCE=10V, f =1.0MHZ)  
Output Capacitance  
(VCB=10V, IE=0, f=0.1MHz)  
P
VBE(SAT)  
fT  
----  
---  
---  
4.0  
---  
1.2  
---  
V
J
MHz  
pF  
Cob  
80  
---  
H
Q
tr  
Fall Time  
(VCC=125V,  
IC=5.0A,  
I
---  
---  
---  
---  
0.7  
3
µs  
µs  
G
ts  
Storage Time  
B1=-IB2=1.0A)  
PIN 1.  
PIN 2.  
PIN 3.  
Base  
Collector  
Emitter  
Classification of hFE(1)  
Rank  
Range  
8-15  
15-20  
20-25  
25-30  
30-35  
35-40  
DIMENSIONS  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
INCHES  
MIN  
MM  
DIM  
NOTE  
MAX  
.407  
MIN  
9.85  
MAX  
A
B
C
D
E
F
G
H
J
K
M
N
P
Q
.388  
.128  
.101  
.570  
.496  
.148  
.096  
.019  
.046  
.266  
.165  
.110  
.097  
.019  
10.35  
3.55  
2.83  
15.5  
13.2  
4.25  
2.57  
.73  
1.43  
7.25  
4.75  
3.31  
2.48  
.73  
.145  
.111  
.610  
.520  
.167  
.101  
.029  
.056  
.285  
.190  
.130  
.107  
.029  
3.25  
2.57  
14.9  
12.6  
3.75  
2.44  
.47  
1.17  
6.75  
4.25  
2.81  
2.72  
.47  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

与MJE13007F相关器件

型号 品牌 获取价格 描述 数据表
MJE13007F_05 KEC

获取价格

TO-220IS PACKAGE
MJE13007F_08 KEC

获取价格

TRIPLE DIFFUSED NPN TRANSISTOR
MJE13007F-BP MCC

获取价格

Power Bipolar Transistor, 8A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MJE13007F-BP-HF MCC

获取价格

Power Bipolar Transistor,
MJE13007FL(TO-220F) UTC

获取价格

Transistor
MJE13007FTU FAIRCHILD

获取价格

Transistor,
MJE13007G ONSEMI

获取价格

NPN Bipolar Power Transistor For Switching Power Supply Applications
MJE13007G-M-TA3-T UTC

获取价格

NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
MJE13007G-P-TA3-T UTC

获取价格

NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING APPLICATIONS
MJE13007G-Q-TA3-T UTC

获取价格

NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING APPLICATIONS