深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN MJE 系列晶体管/MJE SERIES TRANSISTORS
●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范
MJE13007
●FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT
●应用:节能灯 电子镇流器 电子变压器 开关电源
●APPLICATION: ■FLUORESCENT LAMP
■ELECTRONIC BALLAST
■ELECTRONIC TRANSFORMER
■
SWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C)
●Absolute Maximum Ratings(Tc=25°C)
TO-262/263
单位
参数
PARAMETER
符号
SYMBOL
额定值
VALUE
UNIT
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极-基极电压
Emitter- Base Voltage
集电极电流
VCBO
VCEO
VEBO
IC
700
400
9
V
V
V
A
8.0
Collector Current
集电极耗散功率
Total Power Dissipation
Ptot
W
85
最高工作温度
Junction Temperature
Tj
150
°C
°C
贮存温度
Storage Temperature
Tstg
-65-150
●电特性(Tc=25°C)
●Electronic Characteristics(Tc=25°C)
参数名称
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
最大值
MAX
单位
UNIT
CHARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
集电极-发射极截止电流
Collector-Emitter Cutoff Current
ICBO
VCB=700V
100
250
μA
μA
ICEO
VCE=400V,IB=0
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极 -基极电压
VCBO
VCEO
VEBO
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
700
400
9
V
V
V
Emitter- Base Voltage
IC=2.0A,IB=0.4A
IC=8.0A,IB=2.0A
0.4
1.5
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
Vcesat
Vbesat
V
V
发射极-基极饱和电压
Base-Emitter Saturation Voltage
IC=2A,IB=0.4A
1.5
VCE=5V,IC=10mA
VCE=5V,IC=2.0A
VCE=5V,IC=8A
7
10
5
电流放大倍数
DC Current Gain
hFE
40
贮存时间/Storage Time
下降时间/Falling Time
tS
tf
4.0
9.0
0.8
VCC=5V,IC=0.5A
(UI9600)
µ
s
●订单信息/ORDERING INFORMATION:
订货编码/ORDERING CODE
包装形式/PACKING
普通塑封料
Normal Package Material
无卤塑封料
Halogen Free
TO-262 普通袋装/NORMAL PACKING
TO-262 或 263 条管装/TUBE PACKING
TO-263 编带装/TAPE & REEL PACKING
MJE13007 TO-262
MJE13007 TO-262-HF
MJE13007 TO-262-TU 或
MJE13007 TO-263-TU
MJE13007 TO-263-TR
MJE13007 TO-262-TU-HF 或
MJE13007 TO-263-TU-HF
MJE13007 TO-263-TR-HF
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Si semiconductors 2014.11