型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE13006W | MOTOROLA |
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Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
MJE13006WD | MOTOROLA |
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Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
MJE13007 | MCC |
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NPN Power Transistor 8.0 Amperes 400 Volts 2 Watts | |
MJE13007 | DCCOM |
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TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR | |
MJE13007 | SAVANTIC |
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Silicon NPN Power Transistors | |
MJE13007 | MOTOROLA |
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POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS | |
MJE13007 | STMICROELECTRONICS |
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SILICON NPN SWITCHING TRANSISTOR | |
MJE13007 | ISC |
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Silicon NPN Power Transistors | |
MJE13007 | FAIRCHILD |
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High Voltage Switch Mode Application | |
MJE13007 | Wing Shing |
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NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT) |