MJE13005WD

更新时间： 2024-09-23 12:58:35

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
8页	313K
描述
4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB

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技术参数
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MJE13005WD 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.56
Is Samacsys：	N	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	4 A	集电极-发射极最大电压：	400 V
配置：	SINGLE	最小直流电流增益 (hFE)：	6
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
功耗环境最大值：	60 W	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	4 MHz
最大关闭时间（toff）：	3700 ns	Base Number Matches：	1

MJE13005WD 数据手册

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by MJE13005/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

4 AMPERE

NPN SILICON

POWER TRANSISTOR

400 VOLTS

These devices are designed for high–voltage, high–speed power switching

inductive circuits where fall time is critical. They are particularly suited for 115 and

220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor

Controls, Solenoid/Relay drivers and Deflection circuits.

75 WATTS

SPECIFICATION FEATURES:

•

400 V

CEO(sus)

Reverse Bias SOA with Inductive Loads @ T = 100 C

Inductive Switching Matrix 2 to 4 Amp, 25 and 100 C

. . . t @ 3A, 100 C is 180 ns (Typ)

•

700 V Blocking Capability

SOA and Switching Applications Information.

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter Base Voltage

400

700

CEO(sus)

CEV

EBO

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

— Peak (1)

Adc

Emitter Current — Continuous

— Peak (1)

Total Power Dissipation @ T = 25 C

Watts

mW/ C

Derate above 25 C

Total Power Dissipation @ T = 25 C

Derate above 25 C

600

Watts

mW/ C

Operating and Storage Junction Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

62.5

1.67

275

Unit

C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

θJA

θJC

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

REV 3

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7 8

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与MJE13005WD相关器件

型号	品牌	获取价格	描述	数据表
MJE13005-XS	UTC	获取价格	NPN
MJE13006	MOSPEC	获取价格	POWER TRANSISTORS(8A,300-400V,80W)
MJE13006	FAIRCHILD	获取价格	High Voltage Switch Mode Application
MJE13006_13007	FAIRCHILD	获取价格	High Voltage Switch Mode Application
MJE1300616	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE1300616A	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE13006A	MOTOROLA	获取价格	8A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13006AF	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE13006C	MOTOROLA	获取价格	8A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13006D1	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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