MJE13005W

更新时间： 2024-09-23 13:11:35

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
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MJE13005W 数据手册

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SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

4 AMPERE

NPN SILICON

POWER TRANSISTOR

400 VOLTS

These devices are designed for high–voltage, high–speed power switching

inductive circuits where fall time is critical. They are particularly suited for 115 and

220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor

Controls, Solenoid/Relay drivers and Deflection circuits.

75 WATTS

SPECIFICATION FEATURES:

•

400 V

CEO(sus)

Reverse Bias SOA with Inductive Loads @ T = 100 C

Inductive Switching Matrix 2 to 4 Amp, 25 and 100 C

. . . t @ 3A, 100 C is 180 ns (Typ)

•

700 V Blocking Capability

SOA and Switching Applications Information.

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter Base Voltage

400

700

CEO(sus)

CEV

EBO

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

— Peak (1)

Adc

Emitter Current — Continuous

— Peak (1)

Total Power Dissipation @ T = 25 C

Watts

mW/ C

Derate above 25 C

Total Power Dissipation @ T = 25 C

Derate above 25 C

600

Watts

mW/ C

Operating and Storage Junction Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

62.5

1.67

275

Unit

C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

θJA

θJC

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

REV 3

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7 8

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