Datasheet > MJE13005B

MJE13005B

更新时间： 2024-11-10 22:05:11

品牌	Logo	应用领域
永盛 - Wing Shing		变压器晶体晶体管电子
页数	文件大小	规格书
1页	90K
描述
NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT)

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MJE13005B 数据手册

MJE13005B

NPN SILICON TRANSISTOR

ELECTRONIC TRANSFORMERS ,

POWER SWICHING CIRCUIT

ABSOLUTE MAXIMUM RATINGS ( T =25^o

)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

SYMBOL RATING UNIT

CBO

700

400

CEO

EBO

Collector Power Dissipation

Tamb=25^oC

Ptot

1.5

Tcase=25^oC

Junction Temperature

150

Storage Temperature Range

Tstg -55~+150

ELECTRICAL CHARACTERISTICS (T_A=25^oC

)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN. MAX. UNIT

Collector-Emitter Sustaining Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut off current

V(BR)CEO

(BR)CBO

Ic=1m A, I =0

400 -

700 -

=0 , Ic=1m A

(BR) EBO

E C

I =1mA, I =0

CBO

V =700V, I =0

10 00

1000

CEO

Collector-Emitter Cut off Current

Emitter-Base Cut off Voltage

DC Current Gain

V =400V, I =0

EBO

V =9V, Ic=0

hFE

V =

5V, Ic=1A

Collector-Emitter Saturation Voltage

Base-emitter Voltage

Base-Emitter Saturation Voltage

Fall Time

V (sat)

Ic=1A, I =0.25A

1.0

1.25

1.2

V (sat)

Ic=

=0.25A

1A, I

IB1=-IB2=0.4A

B1 B2

Ic=2A

Storage Time

=- I =0.4A

Freqency Characteristics

MHz

V =10V, I =0.5A, f=1MHz 5

CE C

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

中文翻译

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