Datasheet > MJE13005_08

MJE13005_08

更新时间： 2024-09-23 10:55:47

品牌	Logo	应用领域
KEC		晶体晶体管
页数	文件大小	规格书
3页	440K
描述
TRIPLE DIFFUSED NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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MJE13005_08 数据手册

SEMICONDUCTOR

MJE13005

TRIPLE DIFFUSED NPN TRANSISTOR

TECHNICAL DATA

SWITCHING REGULATOR APPLICATION.

HIGH VOLTAGE SWITCHING APPLICATION.

HIGH SPEED DC-DC CONVERTER APPLICATION.

FLUORESCENT LIGHT BALLASTOR APPLICATION.

FEATURES

Excellent Switching Times

: t_on=0.8 S(Max.), t_f=0.9 S(Max.), at I_C=2A

High Collector Voltage : V_CBO=700V.

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

700

400

Collector Current

Pulse

I_CP

I_B

Base Current

Collector Power Dissipation

P_C

(Tc=25

)

T_j

Junction Temperature

150

T_stg

Storage Temperature Range

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Emitter Cut-off Current

SYMBOL

I_EBO

TEST CONDITION

V_EB=9V, I_C=0

MIN.

TYP.

MAX.

UNIT

h_FE(1) (Note) V_CE=5V, I_C=1A

DC Current Gain

h_FE(2)

V_CE=5V, I_C=2A

I_C=1A, I_B=0.2A

0.5

0.6

V_CE(sat)

I_C=2A, I_B=0.5A

Collector-Emitter Saturation Voltage

I_C=4A, I_B=1A

I_C=1A, I_B=0.2A

1.2

1.6

V_BE(sat)

Base-Emitter Saturation Voltage

I_C=2A, I_B=0.5A

C_ob

f_T

V_CB=10V, f=0.1MHz, I_E=0

V_CE=10V, I_C=0.5A

Collector Output Capacitance

Transition Frequency

MHz

OUTPUT

t_on

t_stg

t_f

Turn-On Time

Storage Time

Fall Time

0.8

300µS

INPUT

=I =0.4A

=125V

0.9

DUTY CYCLE 2%

Note : h_FEClassification R:18∼ 27, O:23∼ 35

2008. 3. 26

Revision No : 1

1/3

12 3

中文翻译

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