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MJE13005_06 PDF预览

MJE13005_06

更新时间： 2024-09-23 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
7页 105K
描述
4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 75 WATTS

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MJE13005_06 数据手册

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MJE13005  
Preferred Device  
SWITCHMODEt Series  
NPN Silicon Power  
Transistors  
These devices are designed for high−voltage, high−speed power  
switching inductive circuits where fall time is critical. They are  
particularly suited for 115 and 220 V SWITCHMODE applications  
such as Switching Regulator’s, Inverters, Motor Controls,  
Solenoid/Relay drivers and Deflection circuits.  
http://onsemi.com  
4 AMPERE  
NPN SILICON  
POWER TRANSISTOR  
400 VOLTS − 75 WATTS  
Features  
• V  
400 V  
CEO(sus)  
• Reverse Bias SOA with Inductive Loads @ T = 100_C  
C
• Inductive Switching Matrix 2 to 4 A, 25 and 100_C t @ 3A,  
c
100_C is 180 ns (Typ)  
• 700 V Blocking Capability  
• SOA and Switching Applications Information  
• Pb−Free Package is Available*  
MAXIMUM RATINGS  
TO−220AB  
CASE 221A−09  
Rating  
Collector−Emitter Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Value  
400  
700  
9
Unit  
Vdc  
Vdc  
Vdc  
Adc  
1
STYLE 1  
2
V
CEO(sus)  
3
V
CEV  
V
EBO  
MARKING DIAGRAM  
Collector Current − Continuous  
− Peak (Note 1)  
I
4
8
C
I
I
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
2
4
Adc  
Adc  
B
BM  
Emitter Current  
− Continuous  
− Peak (Note 1)  
I
6
12  
E
EM  
MJE13005G  
AY WW  
Total Device Dissipation @ T = 25_C  
P
P
2
16  
W
C
D
D
Derate above 25°C  
W/_C  
W
W/_C  
_C  
Total Device Dissipation @ T = 25_C  
75  
600  
C
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to  
+150  
J
stg  
A
= Assembly  
THERMAL CHARACTERISTICS  
Location  
Y
WW  
G
Characteristics  
Symbol  
Max  
62.5  
1.67  
275  
Unit  
_C/W  
_C/W  
_C  
= Year  
= Work Week  
= Pb−Free Pack-  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
L
R
q
age  
ORDERING INFORMATION  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
Device  
Package  
Shipping  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJE13005  
MJE13005G  
TO−220  
50 Units / Rail  
50 Units / Rail  
TO−220  
(Pb−Free)  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 7  
MJE13005/D  
 
1234567

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