Datasheet > MJD42CT4(TO-251)

MJD42CT4(TO-251)

更新时间： 2024-11-26 04:39:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	165K
描述
Transistor

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数据手册

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MJD42CT4(TO-251) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251/TO-252-2L Plastic-Encapsulate Transistors

TO-251

TO-252-2L

MJD42C TRANSISTOR (PNP)

FEATURES

Designed for general purpose amplifier and low speed

1.BASE

switching applications.

Lead Formed for Surface Mount Applications in Plastic

Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to Popular TIP41 and TIP42 Series

Monolithic Construction With Built–in Base–Emitter Resistors

2.COLLECTOR

3.EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-100

-5

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-6

P_C

1.25

150

℃

T_J

T_stg

Storage Temperature

-65-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

-100

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100μA,I_E=0

V_(BR)CEOI_C=-30mA,I_B=0

V_(BR)EBOI_E=-100μA,I_C=0

I_CEO

I_EBO

V_CB=-60V,I_E=0

-50

μA

Emitter cut-off current

V_EB=-5V I_C=0

-0.5

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=-4V I_C=-0.3A

V_CE=-4V,I_C=-3A

DC current gain

-1.5

-2

Collector-emitter saturation voltage

Base-emitter voltage

I_C=-6A,I_B=-0.6A

V_CE=-4V,I_C=-6A

Transition frequency

f_T

V_CE=-10V,I_C=-500mA,f=1MHz

MHz

12 3

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