Datasheet > MJD42C-Q

MJD42C-Q

更新时间： 2024-11-06 11:12:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	217K
描述
100 V, 6 A PNP high power bipolar transistorProduction

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MJD42C-Q 数据手册

MJD42C-Q

100 V, 6 A PNP high power bipolar transistor

8 June 2021

Product data sheet

1. General description

PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device

(SMD) plastic package.

NPN complement: MJD41C-Q

2. Features and benefits

•

High thermal power dissipation capability

•

High energy efficiency due to less heat generation

Electrically similar to popular MJD42 series

Low collector emitter saturation voltage

Fast switching speeds

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Power management

Load switch

Linear mode voltage regulator

Constant current drive backlighting application

Motor drive

Relay replacement

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-100

I_C

collector current

-6

-10

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain V_CE= -4 V; I_C= -0.3 A; pulsed; t_p≤

200 µs; δ ≤ 0.02; T_amb= 25 °C

V_CE= -4 V; I_C= -3 A; pulsed; t_p≤

200 µs; δ ≤ 0.02; T_amb= 25 °C

12 3 4 5 6 7...10

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