MJD13003

更新时间： 2024-11-04 04:15:31

品牌	Logo	应用领域
CDIL		晶体晶体管
页数	文件大小	规格书
5页	591K
描述
NPN SILICON PLASTIC POWER TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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MJD13003 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

MJD13003 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

NPN SILICON PLASTIC POWER TRANSISTOR

MJD13003

DPAK (TO-252)

Plastic Package

Designed for High Voltage, High Speed Power Switching Inductive Circuits Applications

ABSOLUTE MAXIMUM RATINGS

VALUE

400

700

9.0

DESCRIPTION

SYMBOL

V_CEO

V_CEV

UNIT

Collector Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

V_EBO

I_C

1.5

*I_CM

I_B

3.0

0.75

1.5

Peak

Base Current Continuous

Peak

*I_BM

I_E

2.25

4.5

Emitter Current Continuous

Peak

*I_EM

**P_D

Total Power Dissipation at T_a=25ºC

1.56

0.0125

0.12

Derate Above 25ºC

Total Power Dissipation at T_c=25ºC

Derate Above 25ºC

W/ºC

P_D

Operating and Storage Junction

Temperature Range

T_j,T_stg

- 65 to +150

ºC

THERMAL CHARACTERISTICS

Junction to Case

R_{th (j-c)}

8.33

ºC/W

**R_{th (j-a)}

Junction to Ambient in free air

Maximum Lead Temperature for

Soldering Purposes

T_L

260

ºC

*Pulse Test:- Pulse Width=5ms, Duty Cycle < 10%

** When Surface Mounted on Minimum Pad Sizes Recommended

ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN TYP MAX

UNIT

V_CEO

I_C=1mA, I_B=0

Collector Emitter Voltage

400

I_CEV

V_CEV=Rated Value, V_{BE (off)}=1.5V

Collector Cut Off Current

0.1

2.0

V_CEV=Rated Value, V_{BE (off)}=1.5V, T_c=100ºC

V_EB=9V, I_C=0

I_C=0.5A, V_CE=2V

I_C=1A, V_CE=2V

I_EBO

***h_FE

Emitter Cut Off Current

DC Current Gain

1.0

8.0

5.0

***Pulse Test:- Pulse Width < 300ms, Duty Cycle < 2%

MJD13003Rev160506E

Data Sheet

Page 1 of 5

Continental Device India Limited

12 3 4 5

中文翻译

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