Datasheet > MJD13002_15

MJD13002_15

更新时间： 2024-11-05 00:59:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1417K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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MJD13002_15 数据手册

SMD Type

Transistors

NPN Transistors

MJD13002

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● Power Switching Applications

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

600

400

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

800

300

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector- emitter cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

600

400

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100μA， I = 0

E= 0

ICBO

ICEO

EBO

CB= 600 V , I

CE= 400 V , I

= 0

100

0.5

1.1

E= 0

^EB= 6V , IC=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=200 mA, I

=40mA

=200 mA, I

hFE(1)

CE= 10V, I

= 200mA

DC current gain

hFE(2)

C= 0.25 mA

Fall time

0.5

2.5

=1A, I^B1=-I^B2=0.2A

CC=100V

Storage time

Transition frequency

^CE= 10V, I

C= 100mA,f=1MHz

MHz

■ Classification of hfe(1)

Type

Range

Marking

MJD13002-A

9-15

MJD13002-B

15-20

MJD13002-C

20-25

MJD13002-D

25-30

MJD13002-E MJD13002-F

30-35

35-40

3002A

3002B

3002C

3002D

3002E

3002F

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MJD13002-D	KEXIN	获取价格	NPN Transistors
MJD13002-E	KEXIN	获取价格	NPN Transistors
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