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MJD13002-E PDF预览

MJD13002-E

更新时间: 2024-09-17 00:59:51
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
2页 1417K
描述
NPN Transistors

MJD13002-E 数据手册

 浏览型号MJD13002-E的Datasheet PDF文件第2页 
SMD Type  
Transistors  
NPN Transistors  
MJD13002  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Power Switching Applications  
1
2
+0.1  
-0.1  
+0.05  
-0.01  
0.95  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
600  
400  
6
Unit  
V
VCBO  
VCEO  
VEBO  
Collector Current - Continuous  
Collector Power Dissipation  
Junction Temperature  
I
C
800  
300  
150  
mA  
P
C
mW  
T
J
Storage Temperature Range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Collector- emitter cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
600  
400  
6
Ic= 100 μAI  
Ic= 1 mAI = 0  
= 100μAI = 0  
E= 0  
B
I
E
C
ICBO  
ICEO  
I
EBO  
V
V
V
CB= 600 V , I  
CE= 400 V , I  
E
= 0  
100  
100  
100  
0.5  
1.1  
40  
uA  
V
E= 0  
EB= 6V , IC=0  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=200 mA, I  
B
=40mA  
=40mA  
V
C
=200 mA, I  
B
hFE(1)  
V
V
CE= 10V, I  
CE= 10V, I  
C
= 200mA  
9
5
DC current gain  
hFE(2)  
C= 0.25 mA  
Fall time  
t
f
0.5  
2.5  
I
V
C
=1A, IB1=-IB2=0.2A  
uS  
CC=100V  
Storage time  
Transition frequency  
ts  
f
T
V
CE= 10V, I  
C= 100mA,f=1MHz  
5
MHz  
Classification of hfe(1)  
Type  
Range  
Marking  
MJD13002-A  
9-15  
MJD13002-B  
15-20  
MJD13002-C  
20-25  
MJD13002-D  
25-30  
MJD13002-E MJD13002-F  
30-35  
35-40  
3002A  
3002B  
3002C  
3002D  
3002E  
3002F  
1
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