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MJD128T4G PDF预览

MJD128T4G

更新时间： 2024-11-04 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 76K
描述
Complementary Darlington Power Transistor

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中文翻译

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MJD128T4G 数据手册

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MJD128T4G (PNP)  
Preferred Device  
Complementary Darlington  
Power Transistor  
DPAK For Surface Mount Applications  
http://onsemi.com  
Features  
Designed for general purpose amplifier and low speed switching  
applications.  
SILICON  
POWER TRANSISTOR  
8 AMPERES  
• Monolithic Construction With Built−in Base−Emitter Shunt Resistors  
• High DC Current Gain −  
h
= 2500 (Typ) @ I = 4.0 Adc  
C
FE  
120 VOLTS, 20 WATTS  
• Epoxy Meets UL 94 V−0 @ 0.125 in.  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
MARKING  
DIAGRAM  
• This is a Pb−Free Device  
4
1
Base  
YWW  
J128G  
4
MAXIMUM RATINGS  
2
Collector  
2
1
3
3
Emitter  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current −  
Symbol  
Value  
120  
120  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
DPAK  
CASE 369C  
STYLE 1  
V
CEO  
Y
= Year  
WW = Work Week  
J128 = Device Code  
V
CB  
EB  
V
G
= Pb−Free Package  
Continuous  
Peak  
I
8
16  
C
Base Current  
I
120  
mAdc  
B
ORDERING INFORMATION  
Total Power Dissipation @ T = 25°C  
P
P
20  
0.16  
W
W/°C  
C
D
D
Derate above 25°C  
†
Device  
MJD128T4G  
Package  
Shipping  
Total Power Dissipation* @ T = 25°C  
1.75  
0.014  
W
W/°C  
A
DPAK  
2500/Tape & Reel  
Derate above 25°C  
(Pb−Free)  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to  
+150  
°C  
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient*  
R
q
JC  
R
q
JA  
Preferred devices are recommended choices for future use  
and best overall value.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*These ratings are applicable when surface mounted on the minimum pad sizes  
recommended.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 1  
MJD128/D  
123456

中文翻译

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MJD128T4G 替代型号

型号 品牌 替代类型 描述 数据表
NJVMJD128T4G ONSEMI

完全替代

 8.0 A，120 V，PNP 达林顿双极功率晶体管
MJD128T4 ONSEMI

类似代替

 8A, 120V, PNP, Si, POWER TRANSISTOR, CASE 369C-01, DPAK, 3 PIN

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