Datasheet > MJ423

MJ423

更新时间： 2024-11-14 10:55:55

品牌	Logo	应用领域
SAVANTIC		晶体晶体管局域网
页数	文件大小	规格书
3页	110K
描述
Silicon NPN Power Transistors

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MJ423 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

MJ423

DESCRIPTION

·With TO-3 package

·High voltage

APPLICATIONS

·Designed for medium-to-high voltage

Inverters,converters,regulators and

switching circuits

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

ABSOLUTE MAXIMUM RATINGS(T_C=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

400

UNIT

Open emitter

Open base

325

Open collector

I_B

Base current

P_D

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

125

ꢀ

-65~150

-65~200

T_j

ꢀ

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal resistance junction to case

1.0

ꢀ/W

R_{th j-c}

12 3

中文翻译

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