Datasheet > MJ410

MJ410

更新时间： 2024-11-15 10:55:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	73K
描述
isc Silicon NPN Power Transistor

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中文翻译

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技术参数
数据手册

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MJ410 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

MJ410 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJ410

DESCRIPTION

·High Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 200V(Min.)

·Low Collector Saturation Voltage-

: V_CE(sat)= 0.8V(Max)@ I_C= 1A

APPLICATIONS

·Designed for medium to high voltage inverters, converters,

regulators and switching circuits.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

VALUE

200

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

I_CM

I_B

Base Current-Continuous

Collector Power Dissipation@T_C=25℃

Junction Temperature

P_C

100

150

-65~200

℃

T_J

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

0.75

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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