Datasheet > MJ410

MJ410

更新时间： 2024-11-15 10:55:55

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	111K
描述
Silicon NPN Power Transistors

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MJ410 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

MJ410

DESCRIPTION

·With TO-3 package

·High collector-emitter voltage

·Low collector saturation voltage

APPLICATIONS

·Designed for medium to high voltage

inverters, converters, regulators and

switching circuits.

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

ABSOLUTE MAXIMUM RATINGS(T_C=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

200

Open base

200

Open collector

I_CM

Collector current-peak

Base current

I_B

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

100

ꢀ

-65~150

T_j

ꢀ

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal resistance junction to case

0.75

ꢀ/W

R_{th j-c}

12 3

中文翻译

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