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MJ4035 PDF预览

MJ4035

更新时间: 2024-11-15 10:55:55
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
4页 216K
描述
MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS

MJ4035 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Is Samacsys:N最大集电极电流 (IC):16 A
配置:DARLINGTON最小直流电流增益 (hFE):1000
最高工作温度:200 °C极性/信道类型:NPN
最大功率耗散 (Abs):150 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

MJ4035 数据手册

 浏览型号MJ4035的Datasheet PDF文件第2页浏览型号MJ4035的Datasheet PDF文件第3页浏览型号MJ4035的Datasheet PDF文件第4页 
MEDIUM POWER COMPLEMENTARY SILICON  
TRANSISTORS  
For use as output devices in complementary general purpose amplifier  
applications.  
High DC current Gain – hFE=3500 (Typ) @ IC=10 Adc  
Monolithic Construction with Built-in Base Emitter Shunt Resistor  
The MJ4030/31/32 ares the transistors NPN  
The complementary PNP types are the MJ4033/34/35  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
MJ4030  
MJ4033  
MJ4031  
MJ4034  
MJ4032  
MJ4035  
MJ4030  
MJ4033  
MJ4031  
MJ4034  
MJ4032  
MJ4035  
MJ4030  
MJ4033  
MJ4031  
MJ4034  
MJ4032  
MJ4035  
60  
80  
Collector-Base Voltage  
Collector-EmitterVoltage  
Emitter-Base Voltage  
IE=0  
VCBO  
V
100  
60  
IB=0  
IC=0  
VCEO  
V
V
80  
100  
VEBO  
5.0  
Page 1 of 4  

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